caution : observe precautions when handling because these devices are sensitive to electrostatic discharge document no. pu10124ej03v0ds (3rd edition) d ate published july 2003 cp(k) silicon power mos fet NE552R479A 3.0 v operation silicon rf power ldmos fet for 2.45 ghz 0.4 w transm ission amplifiers data sheet description the NE552R479A is an n - channel silicon power laterally diffused mos fet specially designed as the transmission power amplifier for 3.0 v wll products. dies are manufactured using our newmos2 technology (our wsi gate laterally diffused mos fet ) and housed in a surface mount package. this device can deliver 26.0 dbm output power with 45% power added efficiency at 2.45 ghz under the 3.0 v supply voltage. features ? high output power : p out = 26.0 dbm typ. (v ds = 3.0 v, i dset = 200 ma, f = 2.45 g hz, p in = 19 dbm) ? high power added efficiency : ? add = 45% typ. (v ds = 3.0 v, i dset = 200 ma, f = 2.45 ghz, p in = 19 dbm) ? high linear gain : g l = 11 db typ. (v ds = 3.0 v, i dset = 200 ma, f = 2.45 ghz, p in = 10 dbm) ? surface mount package : 5.7 ? 5.7 ? 1.1 mm max. ? single supply : v ds = 2.8 to 6.0 v applications ? digital cellular phones : 3.0 v gsm1900 pre driver ? analog cellular phones : 2.8 v amps handsets ? bluetooth tm applications : 3.0 v class 1 devices ? others : 3.0 v two - way pagers orderi ng information part number package marking supplying form NE552R479A - t1 79a aw ? 12 mm wide embossed taping ? gate pin face the perforation side of the tape ? qty 1 kpcs/reel NE552R479A - t1a ? 12 mm wide embossed taping ? gate pin face the perforatio n side of the tape ? qty 5 kpcs/reel remark to order evaluation samples, contact your nearby sales office. part number for sample order: NE552R479A - a the mark ? shows major revised points.
data sheet pu10124ej03v0ds 2 NE552R479A absolute maximum ratings (t a = +25 ? parameter symbol ratings unit drain to source voltage v ds 15 .0 v gate to source voltage v gs 5.0 v drain current i d 300 ma drain current (pulse test) i d note 600 ma total power dissipation p tot 10 w channel temperature t ch 125 ? c storage temperature t stg ? 55 to +125 ? c note duty cycle 50%, t on ? 1 s recomme nded operating conditions parameter symbol test conditions min. typ. max. unit drain to source voltage v ds 2.8 3.0 6.0 v gate to source voltage v gs 0 2.0 3.0 v drain current i d duty cycle 50%, t on ? 1 s ? 200 500 ma input power p in f = 2.45 ghz, v ds = 3.0 v 18 19 25 dbm electrical characteristics (t a = +25 ? parameter symbol test conditions min. typ. max. unit gate to source leak current i gss v gs = 5.0 v ? ? 100 na drain to source leakage current (zero gate voltage drain current) i dss v ds = 6.0 v ? ? 100 na gate threshold voltage v th v ds = 3.5 v, i d = 1 ma 1.0 1.4 1.9 v thermal resistance r th channel to case ? ? 10 ? c/w transconductance g m v ds = 3.5 v, i d = 100 ma ? 0.4 ? s dra in to source breakdown voltage bv dss i dss = 10 ? a 15 18 ? v output power p out f = 2.45 ghz, v ds = 3.0 v, 24.0 26.0 ? dbm drain current i d p in = 19 dbm, ? 230 ? ma power added efficiency ? add i dset = 200 ma (rf off), note1 35 45 ? % linear gain note2 g l ? 11 ? db notes 1. dc performance is 100% testing. rf performance is testing several samples per wafer. wafer rejection criteria for standard devices is 1 reject for several samples. 2. p in = 10 dbm
data sheet pu10124ej03v0ds 3 NE552R479A typical characteristics (t a = +25 ? remark the graphs indicate nominal characteristics.
data sheet pu10124ej03v0ds 4 NE552R479A s - parameters large signal impedance (v ds = 3.0 v, i d = 200 ma, f = 2.45 ghz, p out = 400 mw) f (ghz) z in ( ? ) z ol ( ? ) note 2.45 2.96 ? j7.78 3.36 ? j8.42 note z ol is the conjugate of optimum load imped ance at given voltage, idling current, input power and frequency.
data sheet pu10124ej03v0ds 5 NE552R479A evaluation board for 2.45 ghz symbol value comment c1 2.0 pf c2 1.4 pf c3 2.2 pf c4 0.8 pf c5 0.5 pf c6 10 pf c7 1 000 pf c8 0.22 ? f c9 3.3 ? f - 16v r1 1 000 ? l1 22 nh circuit board t = 0.4 mm, ? r = 4.5 r4775
data sheet pu10124ej03v0ds 6 NE552R479A package dimensions 79a (unit: mm) 79a package recommended p.c.b. layout (unit: mm)
data sheet pu10124ej03v0ds 7 NE552R479A recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 2 60 ? c or below time at peak temperature : 10 seconds or less time at temperature of 220 ? c or higher : 60 seconds or less preheating time at 120 to 180 ? c : 120 ? 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ir260 vps peak temperature (package surface temperature) : 215 ? c or below time at temperature of 200 ? c or higher : 25 to 40 seconds preheating time at 120 to 150 ? c : 30 to 60 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below vp215 wave soldering peak temperature (molten solder temperature) : 260 ? c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 12 0 ? c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperature (pin temperature) : 350 ? c or below soldering time (per pin of device) : 3 seconds or less ma ximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below hs350 - p3 caution do not use different soldering methods together (except for partial heating).
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